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          CN/EN

          Core business

          Core business Silicon wafer grinding machine

          Silicon wafer grinding machine

          WX-6007 Auto Silicon Wafer Grinding Machine

               This machine is applicable for the ultra-precision grinding of Si, SC and LiTaO3 wafers. Grinding dia. range is 100mm~200mm; TTV3μm, Ra10nm. This machine is applicable for the ultra-precision grinding of wafer flatness and the thinner grinding of silicon wafer backside. It is suitable for the mass production.

          I Machine structure features and performance

          1.       This machine is designed with three working stations and two spindles, and the grinding is realized by turning worktable, rough grinding and fine grinding;

          2.       Turing working table is designed as “Vapour rotation – Vacuum fixation”;

          3.       Grinding spindle system is constituted of grinding spindle, spindle seat, vertical pillar, and in-process measuring device for grinding force; Low friction cylinders on both sides of the spindle seat are used to balance the gravity of the spindle part and to increase the motion flexibility of the feed system;

          4.       Grinding spindle and part spindle are all designed with electric spindle with air static bearing, which with the advantages like high rotating precision, and low vibration, is conductive to the productivity improving and wafer surface roughness reduction;

          5.       Micro feed system is driven by servo motor through ball screw for grinding spindle for grinding and feed motion; Feed speed of this system, with 0.1 μm motion resolution, can achieve minimum 0.1 μm/s, and have a good response speed;

          6.       This machine is designed with auto position adjustment and thickness in-process measuring system;

          7.       There’s a micro adjustment device for the angle between grinding spindle and part spindle, so that to ensure the wafer’s surface shape;

          8.       This machine is designed with high precision and high reliability clamping positioning and conveying technology for the wafer, and with reliable automatic centering mechanism; A four-degree-freedom R-θ joint robot is used for wafer transport, so that realized the auto change between each working station.

          9.  This machine is designed with auto cleaning, drying and the auto cleaning for chuck, so that realize the wafer’s dry in and dry out in the grinding process;

          II Machine technical specification and parameters

           Grinding wheel dia.                200mm

           Wafer transfer                    Manipulator

           Wafer chucking                   Vacuum adsorb

          Grinding wheel spindle number        2

          Worktable number                   3

          Worktable cleaning                  Auto

          Worktable driven                   Electric spindle

          Min. feed rate                     0.1μm

          Thickness measuring accuracy        0.1μm

          Grinding wheel speed               0~7000r/min

          Worktable rotate speed              0~300r/min

          Machine total power                20kW

          Grinding wheel power              4.2kW

          Worktable spindle power          0.5kW

          Machine overall dimension        2670x1200x1900

          Machine net weight              3000Kg

           

          III Working accuracy

          Total thickness variation(TTV):≤ 3μm

          Wafer overall surface flatness(GBIR): ≤0.2μm

          Wafer partial surface flatness(SFQR): SFQR≤0.2μm

          Thickness vibration between wafers:≤3μm

          Surface roughness after fine grinding: Ra≤10nm(grinding with #3000 grinding wheel)

           

           

          WX-6008 Auto Silicon Wafer Grinding Machine

          This machine is applicable for the ultra-precision grinding of Si, SC and LiTaO3 wafers. Grinding dia. range is 200mm~300mm; TTV3μm,Ra10nm. This machine is applicable for the ultra-precision grinding of wafer flatness and the thinner grinding of silicon wafer backside which is less than 300mm. It is suitable for the mass production.

          I Machine structure features and performance

          1.         This machine is designed with three working stations and two spindles, and the grinding is realized by turning worktable, rough grinding and fine grinding;

          2.         Turing working table is designed as “Vapour rotation – Vacuum fixation”;

          3.         Grinding spindle system is constituted of grinding spindle, spindle seat, vertical pillar, and in-process measuring device for grinding force; Low friction cylinders on both sides of the spindle seat are used to balance the gravity of the spindle part and to increase the motion flexibility of the feed system;

          4.         Grinding spindle and part spindle are all designed with electric spindle with air static bearing, which with the advantages like high rotating precision, and low vibration, is conductive to the productivity improving and wafer surface roughness reduction;

          5.         Micro feed system is driven by servo motor through ball screw for grinding spindle for grinding and feed motion; Feed speed of this system, with 0.1 μm motion resolution, can achieve minimum 0.1 μm/s, and have a good response speed;

          6.         This machine is designed with auto position adjustment and thickness in-process measuring system;

          7.         There’s a micro adjustment device for the angle between grinding spindle and part spindle, so that to ensure the wafer’s surface shape;

          8.         This machine is designed with high precision and high reliability clamping positioning and conveying technology for the wafer, and with reliable automatic centering mechanism; A four-degree-freedom R-θ joint manipulatoris used forwafer transport, so that realized the auto change between each working station.

          9.   This machine is designed with auto cleaning, drying and the auto cleaning for chuck, so that realize the wafer’s dry in and dry out in the grinding process;

          WP_0000711

          II Machine technical specification and parameters

          Grinding wheel dia             300mm

          Wafer transfer                 Manipulator

          Wafer chucking               Vacuum adsorb

          Grinding wheel spindle number     2

          Worktable number                3

          Worktable cleaning             Auto

          Worktable driven              Electric spindle

          Min. feed rate                  0.1μm

          Thickness measuring accuracy     0.1μm

          Grinding wheel speed            07000r/min

          Worktable rotate speed           0300r/min

          Machine total power            25KW

          Grinding wheel power           6.5KW

          Worktable spindle power         0.5KW

          Machine overall dimension       4196x1400x2111

          Machine net weight             3500Kg

           

          III Working accuracy

          Total thickness variation(TTV) :≤ 3μm

          Wafer overall surface flatness(GBIR): ≤0.2μm

          Wafer partial surface flatness(SFQR): ≤0.2μm

          Thickness vibration between wafers:≤3μm

          Surface roughness after fine grinding: Ra≤10nm(grinding with #3000 grinding wheel)

           

           

           

           

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